Dr. Zakaria Moccatad of the Nanometer Research Group of the University of Southampton in the United States has set graphene into a two-dimensional honeycomb structure, and has thus developed the graphene field effect transistors (GFETs), which have a unique Pipeline structure, related research published in the "Electronic Express" magazine.
Moctad said that the size of silicon complementary metal oxide semiconductors (CMOS) is shrinking and is approaching its limit, so it is necessary to find a suitable substitute. In the field of electronics, graphene is expected to replace silicon, which can be integrated with silicon at least. Used, but the inherent physical properties of graphene make it difficult to cut off the current. Shiros Mizuta, the director of the Nano Research Group, said: “There are many scientists in the world who are researching and trying to cut off the pipelines of GFETs. However, the current methods either require the width of the pipeline to be less than 10 nanometers, or require double-layer graphite. Extremely high voltages are applied vertically on the alkene layer, which makes the switching frequency obtained by these methods unacceptable for practical applications."
Mocartard's study found that by introducing geometric shapes (such as elbows and corners) in the double-layer graphene nanowires, the current can be effectively cut off. Mizuta said that the transistor developed by Mokatad will increase the switching frequency by more than 1,000 times.
Harvey Rutet, head of the school’s Department of Electronics and Computer Science, said: “This is an important breakthrough. It is important for the development of the next generation of computers, communications and electronic devices. We can therefore surpass the existing CMOS. Technology, the development of more advanced transistors. The introduction of geometry into the graphene pipeline is a new idea. This method allows GFETs to maintain their excellent performance while maintaining a simple structure. Therefore, commercial production can be easily achieved."
Mocartad is now conducting further research to understand the mechanism that causes the current to stop flowing within the graphene transistor pipeline.
In terms of carrier migration, graphene is inherently 100-1000 times faster than silicon. Therefore, it is not difficult to increase the frequency. The difficulty is that many processes and technologies are still unclear. "Science" magazine reported a year ago that the graphene field effect transistor developed by IBM has a cut-off frequency of 100 GHz. Using this as a reference, the University of Southampton at least pushed this figure to the order of 100 terahertz. If so, we must have thumbs up for Dr. Moctad. In the past two years, the well blowout momentum in this field has been unbelievable. As the successor to silicon, graphene will lead the semiconductor industry into a new era of miniaturization.
Graphene transistor switching frequency increased 1000 times
According to the report of the American Physicist Organization Network on February 9 (Beijing time), American scientists have developed a transistor using the world's thinnest material, graphene. The new transistor has a record-breaking switching performance, increasing the switching frequency by 1,000. Multiple times, this makes it can be widely used in the future of electronic devices and computers to make it more powerful and perform better.