The role of the IGBT drive circuit: The function of the IGBT drive circuit is mainly to amplify the power of the pulse output of the single chip to achieve the purpose of driving the IGBT power device. The drive circuit plays a vital role in ensuring reliable, stable and safe operation of the IGBT device. Operating characteristics of IGBT: The equivalent circuit of the IGBT and the conformity are shown in Figure 1. The IGBT is controlled by the gate positive and negative voltage. When a positive gate voltage is applied, the tube conducts; when a negative gate voltage is applied, the tube is turned off. The IGBT has a volt-ampere characteristic similar to that of a bipolar power transistor, and the characteristic curve shifts upward as the control voltage UGE increases. The IGBT in the switching power supply changes its UGE level to alternate between saturation and cutoff. IGBT requirements for the drive circuit: (1) Provide appropriate forward and reverse voltages to enable the IGBT to be turned on and off reliably. When the positive bias voltage increases, the IGBT on-state voltage drop and turn-on loss decrease, but if the UGE is too large, the IC will increase with the increase of UGE when the load is short-circuited, which is unfavorable for safety. It is better to use UGEν15V in use. The negative bias voltage can prevent the IGBT from being mis-conducted due to excessive surge current during shutdown. Generally, UGE=-5V is preferred. (2) The switching time of the IGBT should be considered comprehensively. Fast turn-on and turn-off helps increase operating frequency and reduce switching losses. However, under large inductive loads, the turn-on frequency of the IGBT should not be too large, because high-speed breaking and turn-off will result in high peak voltage and may cause breakdown of the IGBT itself or other components. (3) After the IGBT is turned on, the drive circuit should provide sufficient voltage and current amplitude to prevent the IGBT from being damaged due to normal saturation and overload. (4) The resistor RG in the IGBT drive circuit has a large influence on the working performance, and the RG is large, which is beneficial to suppress the current rising rate and the voltage rising rate of the IGBT, but increases the switching time and switching loss of the IGBT; Will cause the current rise rate to increase, causing the IGBT to be turned on or damaged. The specific data of RG is related to the structure of the driving circuit and the capacity of the IGBT, generally in the range of several ohms to tens of ohms, and the IGBT value of the small-capacity IGBT is large. (5) The drive circuit should have strong anti-interference ability and protection function for IG2BT. The control, drive and protection circuits of the IGBT should be matched with its high-speed switching characteristics. In addition, G-E can not be opened without proper anti-static measures. KNM3 Series Moulded Case Circuit Breaker
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