Power Supply Accessories dc power cable,dc terminal.
This product
eliminates having to carry/store a power adapter, by enabling you to connect
devices from a USB port to a DC plug.
Convert a USB A port into a type N power connector, for powering external
drives or mobile peripherals through an available USB port on your
desktop/laptop
One USB A male connector
One type N barrel power connector
Molded connectors with strain relief
Features:
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Delivery on time 48V Passive POE,Male Terminal Press Electric,Post Wire Connector Dongguan Xiaoerduo Electronics Co., Ltd. , https://www.steadysmps.com
The development is characterized by easier brightness enhancement than previous products. At present, Mitsubishi Kagaku Media has decided to adopt this development product on the LED bulb product (brand name "Verbatim"), and it is scheduled to start mass production in March 2013.
This LED easily increases the light output power because it utilizes the "non-polar surface" of the GaN crystal and suppresses crystal defects. The blue LED chip used in this development is a GaN-based semiconductor crystal grown on the non-polar surface of a GaN substrate manufactured by Mitsubishi Chemical Corporation. A common blue LED chip is formed by growing a GaN-based semiconductor on a sapphire substrate, and in this case, a c-plane (polar surface) of a GaN crystal is used.
The non-polar face is a face perpendicular to the polar face. When the polar surface is the growth surface, a piezoelectric electric field is generated, and electrons injected into the light-emitting layer are separated from the holes, resulting in a decrease in the probability of recombination that promotes light emission. The non-polar surface is not susceptible to the influence of the piezoelectric field, so the luminous efficiency can be easily improved.
The crystal defects of this development are only 1×104cm-2 at the minimum. Since the ordinary blue LED chip has a large difference in lattice constant between the sapphire substrate and the GaN-based semiconductor on the sapphire substrate, the crystal defect density reaches 5 × 108 cm -2 .
By virtue of the above means, the developed product is not easily reduced in light output power even at a high current density, thereby improving the light output power of a single white LED. The future goal is to achieve a luminous flux of 1000 lm through a combination of a 1 mm square blue LED chip and a phosphor.
Seoul Semiconductor said that the company is developing UV LED chips that utilize non-polar surfaces of GaN crystals. By combining the ultraviolet LED chip with the red, green, and blue fluorescent materials, it is possible to easily realize a backlight for a liquid crystal panel with high color rendering and a wide range of color expression. However, UV LEDs currently have a problem that the luminous efficiency is lower than that of the blue LED. Therefore, the company intends to use non-polar surfaces to achieve high luminous efficiency UV LEDs. 
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Seoul Semiconductor Introduces GaN Crystal Non-Polar White LED
Seoul Semiconductor of South Korea has developed a white LED that combines fluorescent materials on a 1mm square blue LED chip to achieve a luminous flux of about 500 lm, and exhibited it at the "5th New Generation Lighting Technology Exhibition in Japan".